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KMID : 0380319900460000039
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Journal of Korean Research Institute for Better Living
1990 Volume.46 No. 0 p.39 ~ p.56
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Optical Properties of Amorphous Semiconductor As-Te Films in Doping Ga and In
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Abstract
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The film samples are prepared by the thermal evaporation method. The films which are illuminated in room and low temperature and annealed are measured with x-ray diffraction, absorption coefficients and SEM photographs.
We can see photodarkenning and thermaldarkening from the experimental results.
After laser beam investgated, the samples AsTeIn_x with annealing were shown the reversibility that the abbsorption edge moved to the long wavelength and then moved to the short wavelength again. But the absorption edgge of AsTeGa_x moved to the short wavelength. The absorption cofficients of both samples are increased and the band gap energies are decreased.
Amorphous thin films of AsTeGa_x and AsTeGa_x are separated into two different phase from the detection by SEM photographs.
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KEYWORD
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